Spin-valley polarized quantum anomalous Hall effect and a valley-controlled half-metal in bilayer graphene

被引：29

作者：

Zhai, Xuechao ^{[1
,2
,3
]}

Blanter, Yaroslav M. ^{[3
]}

机构：

[1] Nanjing Univ Posts & Telecommun NJUPT, New Energy Technol Engn Lab Jiangsu Prov, Sch Sci, Nanjing 210023, Peoples R China

[2] Nanjing Univ Posts & Telecommun NJUPT, Inst Informat Phys, Sch Sci, Nanjing 210023, Peoples R China

[3] Delft Univ Technol, Kavli Inst NanoSci, NL-2628 CJ Delft, Netherlands

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 15期

基金：

中国国家自然科学基金;

关键词：

STATES; TRANSPORT;

D O I：

10.1103/PhysRevB.101.155425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange fields, interlayer bias, and light irradiation. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) insulator state, for which the subsystem of one spin is a valley Hall topological insulator (TI) and that of the other spin is a QAH insulator. We assess the TI phases occurring in the system by analytically calculating the spin-valley-dependent Chern number and characterize them by considering edge states in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to a unique spin rectification effect in a domain wall. Along the phase boundary, we observe a bulk half-metal state with Berry's phase of 2 pi.

引用

页数：6

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