Sequential sputtering/selenization technique for the growth of CuInSe2 thin films

被引：25

作者：

Nakada, T ^{[1
]}

Kunioka, A ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 157, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 9AB期

关键词：

CuInSe2; sequential sputter/selenization; sputtering; selenization; thin films; solar cells;

D O I：

10.1143/JJAP.37.L1065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have proposed a sequential sputtering/selenization technique and apparatus for the growth of CuInSe2 (CIS)-based thin films. The apparatus consists of a cylindrical rotating drum for holding substrates and three horizontally interconnected subchambers for Cu, In, and Se fluxes. The serious problem associated with hybrid sputtering of. metal target contamination by Se flux has been greatly reduced by the current geometric design. In this method, a very thin Cu/In stacked layer is first sputter-deposited, and then selenized with thermally evaporated Se vapor at each rotation of the drum. Polycrystalline CIS films for solar cells were grown by sequentially repeating these steps, which prevented the formation of the micron-sized voids usually observed in CIS-based thin films grown by selenization.

引用

页码：L1065 / L1067

页数：3

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