Antimonide-based lasers and DFB laser diodes in the 2-2.7 μm wavelength range for absorption spectroscopy

被引：15

作者：

Barat, D. ^{[1
]}

Angellier, J. ^{[1
]}

Vicet, A. ^{[1
]}

Rouillard, Y. ^{[1
]}

Le Gratiet, L. ^{[2
]}

Guilet, S. ^{[2
]}

Martinez, A. ^{[2
]}

Ramdane, A. ^{[2
]}

机构：

[1] Univ Montpellier 2, CNRS, Inst Elect Sud, UMR 5214, F-34095 Montpellier, France

[2] CNRS, UPR 020, Lab Photon Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2008年 / 90卷 / 02期

关键词：

GaSb; Tunable Diode Laser Absorption Spectroscopy; GaSb Substrate; Tuning Rate; Side Mode Suppression Ratio;

D O I：

10.1007/s00340-007-2880-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on Fabry-Perot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The laser structures were grown by molecular beam epitaxy on GaSb substrates. The devices were etched either by wet process or by inductively coupled plasma (ICP) process. Electron-beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 mu m and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy.

引用

页码：201 / 204

页数：4

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