Temperature dependence of excitonic transitions in AlxGa1-xAs/GaAs quantum wells

被引：7
|
作者：
Lourenço, SA
Dias, IFL
Duarte, JL
Laureto, E
Iwamoto, H
Meneses, EA
Leite, JR
机构：
[1] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, Parana, Brazil
[2] UNICAMP, Inst Fis Gleb Wataghin, Campinas, SP, Brazil
[3] Univ Sao Paulo, Inst Fis, BR-01498 Sao Paulo, Brazil
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 29卷 / 03期
关键词：
quantum wells; excitons; electron-phonon interaction;
D O I：
10.1006/spmi.2000.0959
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier height is observed. The influence of the barrier height on the temperature dependence of excitonic states in the quantum wells is analyzed. (C) 2001 Academic Press.
引用
收藏
页码：225 / 231
页数：7
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