Growth of InP high electron mobility transistor structures with Te doping

被引：4

作者：

Bennett, BR

Suemitsu, T

Waldron, N

del Alamo, JA

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] MIT, Cambridge, MA 02139 USA

[3] NTT Corp, Photon Lab, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

doping; molecular beam epitaxy; arsenides; semiconducting III-V materials; field effect transistors; high electron mobility transistors;

D O I：

10.1016/j.jcrysgro.2004.12.070

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP high electron mobility transistor (HEMT) structures with In0.53Ga0.47As channels and In0.52Al0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 angstrom InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000cm(2)/V-s and sheet densities of 1-4 x 10(12)/cm(2). Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：596 / 599

页数：4

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