Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice

被引：64
作者：
Kurokawa, Yasuyoshi
Tomita, Shigeki
Miyajima, Shinsuke
Yamada, Akira
Konagai, Makoto
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 33-35期
关键词：
solar cell; silicon quantum dots; superlattice; silicon carbide; quantum size effect; photoluminescence;
D O I：
10.1143/JJAP.46.L833
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers. Transmission electron microscope (TEM) observation revealed that silicon quantum dots were formed, in only a-Si1+xC:H layers. The size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence of the Si-QDSLs. The luminescence peaks shifted to shorter wavelength with decreasing the diameter of the silicon quantum dots in the Si-QDSL.
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页码：L833 / L835
页数：3
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