Phosphorus-mediated growth of Ge quantum dots on Si(001)

被引：6

作者：

Qin, J ^{[1
]}

Xue, F ^{[1
]}

Wang, Y ^{[1
]}

Bai, LH ^{[1
]}

Cui, J ^{[1
]}

Yang, XJ ^{[1
]}

Fan, YL ^{[1
]}

Jiang, ZM ^{[1
]}

机构：

[1] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

low dimensional structures; molecular beam epitaxy; quantum dots; silicon germanium semiconductor;

D O I：

10.1016/j.jcrysgro.2004.12.106

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of pre-deposited phosphorus atoms on the formation of self-assembled Ge quantum dots (QDs) on Si(0 0 1) is investigated by solid-source molecular beam epitaxy (MBE) and atomic force microscopy (AFM). AFM images show that P atoms have a great influence on the size and density of Ge QDs. In the presence of 0. 1 NIL P atoms, ;highly uniform self-assembled Ge QDs with a mean base size of 32 nm and an areal density of 1.4 x 10(11) cm(-2) are obtained. These QDs are dome shaped with a size distribution width at half-maximum of 8 nm, which have a higher aspect ratio and are more uniform in size than dots obtained with the presence of C atoms. The strain effect on the nucleation and growth of Ge dots induced by P atoms is discussed. In situ annealing reveals the non-metastable nature of the as-grown uniform dots and they are formed under highly kinetically limited condition. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：136 / 141

页数：6

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