Parametric Characterization of Self-Heating in Depletion-Type Si Micro-Ring Modulators
被引:18
|
作者:
Shin, Myung Jin
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Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Shin, Myung Jin
[1
]
Ban, Yoojin
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机构:
Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
IMEC VZW, B-3001 Heverlee, BelgiumYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Ban, Yoojin
[1
,2
]
Yu, Byung-Min
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Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Yu, Byung-Min
[1
]
Rhim, Jinsoo
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机构:
Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Hewlett Packard Labs, Palo Alto, CA 94304 USAYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Rhim, Jinsoo
[1
,3
]
Zimmermann, Lars
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机构:
Innovat High Performance Microelect, D-15236 Brandenburg, GermanyYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Zimmermann, Lars
[4
]
Choi, Woo-Young
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Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
Choi, Woo-Young
[1
]
机构:
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] IMEC VZW, B-3001 Heverlee, Belgium
[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[4] Innovat High Performance Microelect, D-15236 Brandenburg, Germany
Si ring modulator;
self-heating coefficient;
coupled-mode equation;
self-heating;
FREE-CARRIER ABSORPTION;
SILICON;
D O I:
10.1109/JSTQE.2016.2560149
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.
机构:
Yonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea
IMEC, B-3001 Leuven, BelgiumYonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea
Kim, Minkyu
Jo, Youngkwan
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Yonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South KoreaYonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea
Jo, Youngkwan
Lischke, Stefan
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机构:
IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, GermanyYonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea
Lischke, Stefan
Mai, Christian
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机构:
IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, GermanyYonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea