Parametric Characterization of Self-Heating in Depletion-Type Si Micro-Ring Modulators

被引:18
|
作者
Shin, Myung Jin [1 ]
Ban, Yoojin [1 ,2 ]
Yu, Byung-Min [1 ]
Rhim, Jinsoo [1 ,3 ]
Zimmermann, Lars [4 ]
Choi, Woo-Young [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] IMEC VZW, B-3001 Heverlee, Belgium
[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[4] Innovat High Performance Microelect, D-15236 Brandenburg, Germany
基金
新加坡国家研究基金会;
关键词
Si ring modulator; self-heating coefficient; coupled-mode equation; self-heating; FREE-CARRIER ABSORPTION; SILICON;
D O I
10.1109/JSTQE.2016.2560149
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.
引用
收藏
页码:116 / 122
页数:7
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