Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

被引：10

作者：

Shim, KH

Paek, MC

Lee, BT

Kim, C

Kang, JY

机构：

[1] Elect & Telecommun Res Inst, Microelect Technol Res Lab, SiGe Device Team, Yusong Gu, Taejon 305350, South Korea

[2] LG Corp Inst Technol, Seocho Gu, Seoul 137724, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 04期

关键词：

D O I：

10.1007/s003390100787

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800 degreesC revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN(0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

引用

页码：471 / 474

页数：4

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