Fabrication and field-emission performance of zinc sulfide nanobelt arrays

被引:45
作者
Lu, Fang
Cai, Weiping [1 ]
Zhang, Yugang
Li, Yue
Sun, Fengqiang
Heo, Sung Hwan
Cho, Sung Oh
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Korea Adv Inst Sci & Technol, Dept Nucl & Quantum Engn, Taejon 305701, South Korea
关键词
D O I
10.1021/jp074694a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Large-scale, well-aligned, and oriented wurtzite ZnS nanobelt arrays have been synthesized by a simple template-free solvothermal reaction and subsequent heat-treatment process. The ZnS nanobelts grow along the [0001] direction perpendicularly on a zinc substrate, which have a thickness of about 30 nm, widths of several hundreds of narrometers, and uniform length up to 4,mu m. The selection of Zn foil as the substrate is crucial for the formation of ZnS nanostructured arrays. The concentration of Zn ions, the pH value in the initial precursor solution, and the reaction temperature also have an important influence on the morphology of the final arrays. The formation of the nanobelt arrays are attributed to the structural compatibility of the substrate with ZnS and the growth-rate-dependence of morphology. Importantly, such nanostructured arrays show good field-emission properties with low turn-on fields (3.8 V mu m(-1)) and high field-enhancement factors (1839). This is attributed to the top edges and corners of the free-standing and well-aligned nanobelts, suitable number density of emitters, and good electric contact of the nanobelts with the conducting substrate where they grow. This well-aligned ZnS nanobelt array is expected to be the promising candidate for various field-emission applications, such as flat-panel displays and other vacuum microelectronic devices.
引用
收藏
页码:13385 / 13392
页数:8
相关论文
共 74 条
[1]   Field-effect transistors based on single semiconducting oxide nanobelts [J].
Arnold, MS ;
Avouris, P ;
Pan, ZW ;
Wang, ZL .
JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (03) :659-663
[2]   Field emission from single-wall carbon nanotube films [J].
Bonard, JM ;
Salvetat, JP ;
Stockli, T ;
de Heer, WA ;
Forro, L ;
Chatelain, A .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :918-920
[3]   ZnS precipitation: morphology control [J].
Bredol, M ;
Merikhi, J .
JOURNAL OF MATERIALS SCIENCE, 1998, 33 (02) :471-476
[4]   Study of the growth of ZnS nanoparticles in water/AOT/n-heptane microemulsions by UV-absorption spectroscopy [J].
Calandra, P ;
Goffredi, M ;
Liveri, VT .
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 1999, 160 (01) :9-13
[5]  
Cao BQ, 2007, J PHYS CHEM C, V111, P2470, DOI 10.1021/jp0666611
[6]   Catalytic growth and characterization of gallium nitride nanowires [J].
Chen, CC ;
Yeh, CC ;
Chen, CH ;
Yu, MY ;
Liu, HL ;
Wu, JJ ;
Chen, KH ;
Chen, LC ;
Peng, JY ;
Chen, YF .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (12) :2791-2798
[7]   Effects of light illumination on field emission from CuO nanobelt arrays [J].
Chen, J ;
Huang, NY ;
Deng, SZ ;
She, JC ;
Xu, NS ;
Zhang, WX ;
Wen, XG ;
Yang, SH .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[8]   Field emission from crystalline copper sulphide nanowire arrays [J].
Chen, J ;
Deng, SZ ;
Xu, NS ;
Wang, SH ;
Wen, XG ;
Yang, SH ;
Yang, CL ;
Wang, JN ;
Ge, WK .
APPLIED PHYSICS LETTERS, 2002, 80 (19) :3620-3622
[9]   Field-emission from long SnO2 nanobelt arrays [J].
Chen, YJ ;
Li, QH ;
Liang, YX ;
Wang, TH ;
Zhao, Q ;
Yu, DP .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5682-5684
[10]   Synthesis of taperlike Si nanowires with strong field emission [J].
Chueh, YL ;
Chou, LJ ;
Cheng, SL ;
He, JH ;
Wu, WW ;
Chen, LJ .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3