Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model

被引：5

作者：

Tanaka, Hajime ^{[1
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan

来源：

SOLID-STATE ELECTRONICS | 2016年 / 123卷

基金：

日本学术振兴会;

关键词：

Germanium (Ge); Nanowire; Top of the barrier; Quasi-ballistic transport; Backscattering; Tunneling; BOUNDARY-CONDITIONS; SCATTERING; CHANNEL; MOSFETS; STRAIN; TRANSISTORS; SIMULATION; EQUATION; PHYSICS; GE;

D O I：

10.1016/j.sse.2016.04.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ballistic hole transport properties in rectangular cross-sectional germanium nanowire transistors with various geometries were studied based on the "Top of the Barrier" model. Then, by an extension of this model, the quasi-ballistic hole transport was discussed taking into account phonon and surface roughness scattering in the channel and source-to-drain direct tunneling. Among several nanowire geometries targeted in this study, the [110]-oriented nanowire with large height along[1 (1) over bar0] ([110]/(1 (1) over bar0) NW) exhibited the largest ballistic current. This was understood from its large density of states and resulting high hole density. Large density of states, however, enhances backscattering in the channel. An approximation analysis of quasi-ballistic transport suggested that the [110]/(001) NW with higher mobility can outperform [110]/(1 (1) over bar0) NW when scattering and tunneling are considered. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：143 / 149

页数：7

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