The effect of rare earth (Ln = Gd, Dy, Y and Yb) doping on the microstructure and reliability in BaTiO3-based monolithic ceramic capacitors (MLCs)

被引:5
作者
Okamatsu, Toshihiro [1 ]
Nishimura, Hitoshi [1 ]
Inoue, Noriyuki [1 ]
Sano, Harunobu [1 ]
Takagi, Hiroshi [1 ]
机构
[1] Murata Mfg Co Ltd, Nagaokakyo, Kyoto 6178555, Japan
来源
ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII | 2010年 / 421-422卷
关键词
Reliability; BaTiO(3); MLCs; Site occupancy; Rare earth; Acceptor; Donor; OXIDES;
D O I
10.4028/www.scientific.net/KEM.421-422.301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of rare earth (Ln = Gd, Dy, Y and Yb) and Mg ions on the microstructure and reliability of BaTiO(3)-based monolithic ceramic capacitors (MLCs) with Ni electrodes was investigated. The X-ray diffraction results about the lattice volume of sintered specimens suggested that Gd and Dy ions predominatly substituted into the Ba-site, Yb ions gave exclusive substitution at the Ti-site, while Y ions occupied either the Ba- and Ti-site. The reliability of ceramic capacitors was increasing with increasing the ionic radius of the rare earths in this study. The nonlinearity coefficient(alpha) etsimated from the leakage currents and the lifetime measured from the highly accelerated lifetime testing (HALT) showed a negative correlation which was observed only from Dy and Y ions doped specimens. The quantity of Ln and Mg in the grains tended to increase with increasing the Ln ionic radius. In order to improve the reliability and the insulation property of BaTiO(3) based MLCs with Ni electrodes, it is important that acceptor ions at the Ti-site compensate donor ions which are rare earth ions at the Ba-site, so the overall quantity of the dopants required for the charge compensation with acceptor and donor ions increases accordingly.
引用
收藏
页码:301 / 304
页数:4
相关论文
共 8 条
[1]  
HAMAJI Y, 1995, 7 US JAP SEM DIEL PI, P273
[2]   Effect of occupational sites of rare-earth elements on the microstructure in BaTiO3 [J].
Kishi, H ;
Kohzu, N ;
Mizuno, Y ;
Iguchi, Y ;
Sugino, J ;
Ohsato, H ;
Okuda, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5452-5456
[3]  
KROGER FA, 1956, SOLID STATE PHYS, V3, P307
[4]   Effect of Mn addition on dc-electrical degradation of multilayer ceramic capacitor with Ni internal electrode [J].
Morita, K ;
Mizuno, Y ;
Chazono, H ;
Kishi, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (11B) :6957-6961
[5]  
NOMURA T, 1992, J JPN SOC POWDER POW, V8, P618
[6]   Effects of rare-earth oxides on the reliability of X7R dielectrics [J].
Sakabe, Y ;
Hamaji, Y ;
Sano, H ;
Wada, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (09) :5668-5673
[7]   EFFECTIVE IONIC RADII IN OXIDES AND FLUORIDES [J].
SHANNON, RD ;
PREWITT, CT .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY, 1969, B 25 :925-&
[8]   Crystal and defect chemistry of rare earth cations in BaTiO3 [J].
Tsur, Y ;
Dunbar, TD ;
Randall, CA .
JOURNAL OF ELECTROCERAMICS, 2001, 7 (01) :25-34