Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches

被引：108

作者：

Li, Mi ^{[1
]}

Zhuge, Fei ^{[1
]}

Zhu, Xiaojian ^{[1
]}

Yin, Kuibo ^{[1
]}

Wang, Jinzhi ^{[1
]}

Liu, Yiwei ^{[1
]}

He, Congli ^{[1
]}

Chen, Bin ^{[1
]}

Li, Run-Wei ^{[1
]}

机构：

[1] CAS, NIMTE, Ningbo 315201, Zhejiang, Peoples R China

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 42期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; MULTIFERROICS; SYSTEM;

D O I：

10.1088/0957-4484/21/42/425202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The resistive switching (RS) characteristics of a Bi0.95La0.05FeO3 (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

引用

页数：5

共 26 条

[1] Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films
Bea, H.
Bibes, M.
Cherifi, S.
Nolting, F.
Warot-Fonrose, B.
Fusil, S.
Herranz, G.
Deranlot, C.
Jacquet, E.
Bouzehouane, K.
Barthelemy, A.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (24)
[2] Spintronics with multiferroics
Bea, H.
Gajek, M.
Bibes, M.
Barthelemy, A.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (43)
[3] Temperature dependence of the resistance of metallic nanowires of diameter ≥15 nm:: Applicability of Bloch-Gruneisen theorem
Bid, Aveek
Bora, Achyut
Raychaudhuri, A. K.
[J]. PHYSICAL REVIEW B, 2006, 74 (03)
[4] Physics and Applications of Bismuth Ferrite
Catalan, Gustau
Scott, James F.
[J]. ADVANCED MATERIALS, 2009, 21 (24) : 2463 - 2485
[5] Multiferroics: a magnetic twist for ferroelectricity
Cheong, Sang-Wook
Mostovoy, Maxim
[J]. NATURE MATERIALS, 2007, 6 (01) : 13 - 20
[6] Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films
Hamaguchi, M
Aoyama, K
Asanuma, S
Uesu, Y
Katsufuji, T
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (14)
[7] Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures
Hasan, Musarrat
Dong, Rui
Choi, H. J.
Lee, D. S.
Seong, D. -J.
Pyun, M. B.
Hwang, Hyunsang
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (20)
[8] Nonvolatile resistive switching in graphene oxide thin films
He, C. L.
Zhuge, F.
Zhou, X. F.
Li, M.
Zhou, G. C.
Liu, Y. W.
Wang, J. Z.
Chen, B.
Su, W. J.
Liu, Z. P.
Wu, Y. H.
Cui, P.
Li, Run-Wei
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (23)
[9] Jeong DS, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1968416, 10.1063/1.1865326]
[10] High-Density Crossbar Arrays Based on a Si Memristive System
Jo, Sung Hyun
Kim, Kuk-Hwan
Lu, Wei
[J]. NANO LETTERS, 2009, 9 (02) : 870 - 874

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