Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization

被引：37
作者：
Tsai, Chih-Tsung
Chang, Ting-Chang
Liu, Po-Tsun
Yang, Po-Yu
Kuo, Yu-Chieh
Kin, Kon-Tsu
Chang, Pei-Lin
Huang, Fon-Shan
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan
[6] Ind Technol Res Inst, Energy & Environm Res Labs, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期
关键词：
D O I：
10.1063/1.2753762
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 degrees C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 angstrom thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. (c) 2007 American Institute of Physics.
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页数：3
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