Trench cathode TIGBT with improved latch-up characteristics

被引：19
作者：
Park, IY [1 ]
Choi, YI [1 ]
机构：
[1] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea
来源：
PHYSICA SCRIPTA | 1999年 / T79卷
关键词：
D O I：
10.1238/Physica.Topical.079a00337
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new TIGBT (Trench Insulated Gate Bipolar Transistor) with a trench cathode is proposed to suppress the latch-up which is a key problem to limit the maximum operating current. The efficiency of the proposed device is verified by numerical analysis with MEDICI. Trench cathode TIGBT could suppress the latch-up at anode voltage of 300 V and current density of 19 000A/cm(2) while planar IGBT and conventional TIGBT latch at the anode current density of 1300 and 4200 A/cm(2), respectively. Forward voltage drops of trench cathode TIGBT, conventional TIGBT and planar IGBT are 1.53 V, 1.48 V and 2.43 V, respectively. In addition trench cathode TIGBT has very large FBSOA (Forward Biased Safe Operating Area) compared with that of conventional TIGBT and planar IGBT.
引用
收藏
页码：337 / 340
页数：4
相关论文
共 11 条
  • [1] Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264
  • [2] BALIGAR BJ, 1996, POWER SEMICONDUCTOR, P452
  • [3] 500-V N-CHANNEL INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH GATE STRUCTURE
    CHANG, HR
    BALIGA, BJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1824 - 1829
  • [4] CHOW TP, 1994, ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P57, DOI 10.1109/ISPSD.1994.583647
  • [5] Hotz R., 1995, Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, ISPSD '95 (IEEE Cat. No.95CH35785), P224, DOI 10.1109/ISPSD.1995.515039
  • [6] Kitagawa M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P679, DOI 10.1109/IEDM.1993.347221
  • [7] LATCH-UP SUPPRESSED INSULATED GATE BIPOLAR-TRANSISTOR BY THE DEEP P(+) ION-IMPLANTATION UNDER THE N(+) SOURCE
    LEE, BH
    YUN, CM
    KIM, HS
    HAN, MK
    CHOI, YI
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 563 - 566
  • [8] NAKAYAMA K, 1992, P ISPSD 92, P34
  • [9] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE
    RUSSELL, JP
    GOODMAN, AM
    GOODMAN, LA
    NEILSON, JM
    [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 63 - 65
  • [10] THAPAR N, 1994, ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P177, DOI 10.1109/ISPSD.1994.583697
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