Trench cathode TIGBT with improved latch-up characteristics

被引：19

作者：

Park, IY ^{[1
]}

Choi, YI ^{[1
]}

机构：

[1] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea

来源：

PHYSICA SCRIPTA | 1999年 / T79卷

关键词：

D O I：

10.1238/Physica.Topical.079a00337

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new TIGBT (Trench Insulated Gate Bipolar Transistor) with a trench cathode is proposed to suppress the latch-up which is a key problem to limit the maximum operating current. The efficiency of the proposed device is verified by numerical analysis with MEDICI. Trench cathode TIGBT could suppress the latch-up at anode voltage of 300 V and current density of 19 000A/cm(2) while planar IGBT and conventional TIGBT latch at the anode current density of 1300 and 4200 A/cm(2), respectively. Forward voltage drops of trench cathode TIGBT, conventional TIGBT and planar IGBT are 1.53 V, 1.48 V and 2.43 V, respectively. In addition trench cathode TIGBT has very large FBSOA (Forward Biased Safe Operating Area) compared with that of conventional TIGBT and planar IGBT.

引用

页码：337 / 340

页数：4

共 11 条

[1]

Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264

[2]

BALIGAR BJ, 1996, POWER SEMICONDUCTOR, P452

[3] 500-V N-CHANNEL INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH GATE STRUCTURE [J].

CHANG, HR ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1824-1829

[4]

CHOW TP, 1994, ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P57, DOI 10.1109/ISPSD.1994.583647

[5]

Hotz R., 1995, Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, ISPSD '95 (IEEE Cat. No.95CH35785), P224, DOI 10.1109/ISPSD.1995.515039

[6]

Kitagawa M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P679, DOI 10.1109/IEDM.1993.347221

[7] LATCH-UP SUPPRESSED INSULATED GATE BIPOLAR-TRANSISTOR BY THE DEEP P(+) ION-IMPLANTATION UNDER THE N(+) SOURCE [J].

LEE, BH ;

YUN, CM ;

KIM, HS ;

HAN, MK ;

CHOI, YI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :563-566

[8]

NAKAYAMA K, 1992, P ISPSD 92, P34

[9] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].

RUSSELL, JP ;

GOODMAN, AM ;

GOODMAN, LA ;

NEILSON, JM .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :63-65

[10]

THAPAR N, 1994, ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P177, DOI 10.1109/ISPSD.1994.583697

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