Bias dependence of FD transistor response to total dose irradiation

被引：52

作者：

Flament, O ^{[1
]}

Torres, A ^{[1
]}

Ferlet-Cavrois, V ^{[1
]}

机构：

[1] CEA, DIF, F-91680 Bruyeres Le Chatel, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期

关键词：

buried oxide; charge trapping; fully depleted SOI; latch-up; MOSFET; silicon-on-insulator; total dose irradiation; worst case bias; X-ray effects;

D O I：

10.1109/TNS.2003.822594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we explore the worst case bias response of fully depleted transistors. Floating body and external body ties transistors fabricated on different SOI substrates are characterized using X-rays. The influence of gate length is presented. The coupling effect between front and back gate as well as latch triggered by floating body effect are evaluated as a function of dose level.

引用

页码：2316 / 2321

页数：6

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