Coulomb blockade oscillations of Si single-electron transistors

被引：9

作者：

Wang, TH ^{[1
]}

Li, HW ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

CHINESE PHYSICS | 2001年 / 10卷 / 09期

关键词：

single-electron tunnelling; Coulomb blockade; quantum dots;

D O I：

10.1088/1009-1963/10/9/314

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by. applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.

引用

页码：844 / 846

页数：3

共 8 条

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