Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2

被引：9

作者：

Han, Changhyeon ^{[1
,2
]}

Kwon, Seok Jin ^{[1
,2
]}

Yim, Jiyong ^{[1
,2
]}

Kim, Jeonghan ^{[1
,2
]}

Kim, Sangwoo ^{[1
,2
]}

Jeong, Soi ^{[1
,2
]}

Park, Eun Chan ^{[1
,2
]}

You, Ji Won ^{[1
,2
]}

Choi, Rino ^{[3
]}

Kwon, Daewoong ^{[1
,2
]}

机构：

[1] Inha Univ, Dept Elect & Comp Engn, Incheon 22212, South Korea

[2] Inha Univ, 3D Convergence Ctr, Incheon 22212, South Korea

[3] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Ferroelectricity annealing method; grain size engineering; HfZrO2 ferroelectric (FE) material;

D O I：

10.1109/TED.2022.3168237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ferroelectric (FE) properties of HfZrO2 were studied by modulating the rapid thermal annealing (RTA) rising time (T-r). As T-r becomes shorter, the polarization is clearly observed to increase prior to becoming saturated. On the contrary, the leakage current that is flowing through the FE film increases continuously. Our analysis of the FE properties of the material indicated that smaller grains are formed in the FE films after RTA with a shorter T-r, and that the T-r-induced grain size determines the polarization switching and leakage current. Accordingly, our findings confirmed that both the polarization and leakage current can be simultaneously co-optimized using grain size engineering by modulating T-r.

引用

页码：3499 / 3502

页数：4

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