Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

被引：8

作者：

Meftah, A. ^{[1
]}

Ajlani, H. ^{[1
]}

Aloulou, S. ^{[1
]}

Oueslati, M. ^{[1
]}

Scalbert, D. ^{[2
]}

Allegre, J. ^{[2
]}

Maaref, H. ^{[3
]}

机构：

[1] Fac Sci Tunis, Dept Phys, Tunis 1060, Tunisia

[2] Fac Sci & Tech Montpellier II, Grp Etude Semicond, Languedoc Roussillon, France

[3] Fac Sci Monastir, Lab Semicond & Composants Elect, Monastir 5000, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 08期

关键词：

AlGaAs/GaAs heterostructures; time-resolved photoluminescence; radiative lifetimes;

D O I：

10.1016/j.jlumin.2007.12.042

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photoluminescence (PL) at low temperature of three delta-doped AlGaAs/GaAs heterostructures is investigated under continuous and pulsed excitations. The PL under continuous excitations allows the identification of the trapping centres and probes the carrier's transfer to the GaAs channel. The time-resolved photoluminescence (TRPL) inquires about carrier dynamics and gives radiative lifetimes of different levels. The DX level shows two time constants of the intensity decay relating the splitting of the valence band under impurity strains which reduce the crystal symmetry. The two time constants evolve with temperature and exhibit an increase near T = 50 K. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1317 / 1322

页数：6

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