Design and optimization of dual-threshold circuits for low-voltage low-power applications

Reduction in leakage power has become an important concern in ion-voltage, low-power, and high-performance applications. In this paper,(1) we use the dual-threshold technique to reduce leakage power by assigning a high-threshold voltage to some transistors in noncritical paths, and using low-threshold transistors in critical path(s), In order to achieve the best leakage po tr-er saving under target performance constraints, an algorithm is presented for selecting and assigning an optimal high-threshold voltage. A general leakage current model which has been verified by HSPICE simulations is used to estimate leakage power. Results show that the dual-threshold technique is good for leakage power reduction during both standby and active modes. For some ISCAS benchmark circuits, the leakage power can he reduced by more than 80%. The total active power saving can be around 50% and 20% at low- and high-snitching activities, respectively.