Zinc oxide films by thermal oxidation of zinc thin films

被引:75
作者
Li, L
Gao, W
Reeves, RJ
机构
[1] Univ Auckland, Dept Chem & Mat Engn, Auckland 1, New Zealand
[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 1, New Zealand
关键词
zinc oxide; magnetron; sputtering; oxidation; photo luminescence; transmittance;
D O I
10.1016/j.surfcoat.2004.10.111
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zinc thin films were deposited onto glass substrates using magnetron sputtering in argon or argon and oxygen mixed atmospheres. These films were then oxidized in air at 600 degrees C for I h to form thin oxide films. ZnO films formed by oxidation of Zn thin films deposited in Ar normally had a dense structure with oxide whiskers on the surface. These films had low optical transmittance in visible light region, but exhibited strong UV and weak defect-related emissions. Addition of oxygen into the sputtering gas led to the partial fort-nation of ZnO in the film, further resulting in the formation of porous and highly transparent oxide films, which showed relatively strong defect-related emission with laser excitation at room temperature. The relations between structural and optical properties were then discussed briefly. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:319 / 323
页数:5
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