Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions

被引：3

作者：

Goto, Masaki ^{[1
]}

Koga, Akira

Yamada, Kazuhiro ^{[2
]}

Kato, Yoshimine ^{[2
]}

Teii, Kungen ^{[3
]}

机构：

[1] Kyushu Univ, Dept Automot Sci, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan

[2] Kyushu Univ, Dept Mat Sci & Engn, 744 Motooka, Fukuoka 8190395, Japan

[3] Kyushu Univ, Dept Appl Sci Elect & Mat, Kasuga, Fukuoka 8168580, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

3C-SiC; beta-SiC; nanocrystalline diamond; Si(001); microwave plasma-enhanced CVD; DIAMOND;

D O I：

10.4028/www.scientific.net/MSF.679-680.524

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200 degrees C in 2%CH4/98%H-2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830 degrees C in 1%CH4/30%N-2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (similar to 20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

引用

页码：524 / +

页数：2

共 6 条

[1] Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J].

Bhattacharyya, S ;

Auciello, O ;

Birrell, J ;

Carlisle, JA ;

Curtiss, LA ;

Goyette, AN ;

Gruen, DM ;

Krauss, AR ;

Schlueter, J ;

Sumant, A ;

Zapol, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1441-1443

[2] Origin of reverse leakage current in n-type nanocrystalline diamond/p-type silicon heterojunction diodes [J].

Ikeda, Tomohiro ;

Teii, Kungen .

APPLIED PHYSICS LETTERS, 2009, 94 (07)

[3]

KATO Y, SURF COAT T IN PRESS

[4] Phosphorus-doped chemical vapor deposition of diamond [J].

Koizumi, S ;

Teraji, T ;

Kanda, H .

[5] The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide [J].

Ohshima, T ;

Lee, KK ;

Ishida, Y ;

Kojima, K ;

Tanaka, Y ;

Takahashi, T ;

Yoshikawa, M ;

Okumura, H ;

Arai, K ;

Kamiya, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B) :L625-L627

[6] Effect of enhanced C2 growth chemistry on nanodiamond film deposition [J].

Teii, Kungen ;

Ikeda, Tomohiro .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

← 1 →