Optical emission during the plasma etch for process control of the Litho-Etch bias

被引：0
|
作者：
Altamirano, Efrain [1 ]
Kunnen, Eddy [1 ]
Werner, Boullart [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
ISSM 2007: 2007 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present the suitability of using the optical emission spectroscopy (OES) as real-time monitoring of the reactive ion etching (RIE) process. Selecting the proper wavelength (520nm), we found that the OES monitoring is more reliable than the typical etch rate statistical process control (SPC). In this paper we discuss our experience of using in-situ and ex-situ SPC's to monitor the SiOC (hard mask) etching and trimming.
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页码：377 / 379
页数：3
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