High-frequency rectification via chiral Bloch electrons

被引:168
作者
Isobe, Hiroki [1 ]
Xu, Su-Yang [1 ]
Fu, Liang [1 ]
机构
[1] MIT, Dept Phys, Cambridge, MA 02139 USA
关键词
GRAPHENE; TRANSPORT; SILICON;
D O I
10.1126/sciadv.aay2497
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Rectification is a process that converts electromagnetic fields into a direct current. Such a process underlies a wide range of technologies such as wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small-voltage or high-frequency inputs. Here, we present an alternative approach to current rectification that uses the intrinsic electronic properties of quantum crystals without using semiconductor junctions. We identify a previously unknown mechanism for rectification from skew scattering due to the inherent chirality of itinerant electrons in time-reversal invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multi-layers and transition metal dichalcogenides. Our work demonstrates the possibility of realizing high-frequency rectifiers by rational material design and quantum wave function engineering.
引用
收藏
页数:8
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