Radiation damage of prototype SiPMs for the CMS HCAL Barrel phase I upgrade

被引：10
作者：
Musienko, Yu. [1 ,2 ]
Heering, A. [1 ]
Ruchti, R. [1 ]
Wayne, M. [1 ]
Andreev, Yu. [2 ]
Karneyeu, A. [2 ]
Postoev, V. [2 ]
机构：
[1] Univ Notre Dame, Notre Dame, IN 46556 USA
[2] RAS, Inst Nucl Res, Pr 60 Letiya Oktyabrya 7a, Moscow 117312, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2018年 / 912卷
基金：
美国国家科学基金会;
关键词：
Silicon photomultiplier; CMS; Radiation damage; EMISSION; TRAPS;
D O I：
10.1016/j.nima.2017.12.059
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Results from a study of the radiation hardness of silicon photomultipliers (SiPMs) are presented. New ultra high density SiPMs have been recently developed by FBK for the CMS HCAL Barrel phase I upgrade. SiPMs were irradiated to a total dose of 2 x 10(12) n/cm(2) (1 MeV equivalent) at the TRIGA reactor at the JSI in Slovenia. The SiPM's main parameters were measured before and after irradiation. The effects of the neutron radiation on breakdown voltage, signal amplitude, dark current and noise for these devices are shown and discussed. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：359 / 362
页数：4
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