Stability of Crystalline Gd2O3 Thin Films on Silicon during Post-growth Processing

被引：0
作者：
Schwendt, D. [1 ]
Tetzlaff, D. [1 ]
Bugiel, E. [1 ]
Osten, H. J. [1 ]
Gottlob, H. D. B. [2 ]
机构：
[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, Hannover, Germany
[2] AMO GmbH, Aachen, Germany
来源：
2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009) | 2009年
关键词：
High-K dielectrics; gadolinium oxide; temperature stability; forming gas anneal; gadolinium silicate; MOSFETS; LAYERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results for crystalline Gd2O3-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO2 in future MOS devices. First electrical characteristics of n- and p-type SOI-MOSFETs with epitaxial Gd2O3 demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes has been identified as a key issue. Here, we investigate the effect of post-growth annealing on layer properties. Standard forming gas anneal can eliminate flatband instabilities and hysteresis as well as reduce leakage currents by saturating dangling bond caused by the bonding mismatch. In addition, we investigated the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si. Finally, we will show a new way to improve the thermal stability of those crystalline layers significantly.
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页码：28 / +
页数：2
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