Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor

被引：81

作者：

Kumar, Sona P. ^{[2
]}

Agrawal, Anju ^{[2
]}

Chaujar, Rishu ^{[3
]}

Gupta, R. S. ^{[1
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Maharaja Agrasen Inst Technol GGSIPU, Dept Elect & Commun Engn, New Delhi 110086, India

[2] Univ Delhi, Acharya Narendra Dev Coll, Dept Elect, New Delhi 110019, India

[3] Delhi Technol Univ, Dept Appl Phys, New Delhi 110042, India

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 03期

关键词：

MODFETS; PERFORMANCE; MODULATION; SIMULATION; IMPACT;

D O I：

10.1016/j.microrel.2010.09.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance of Single Material Gate (SMG) AlGaN/GaN HEMT using ATLAS device simulation. Specifically, we investigate the linearity of DMG and conventional AlGaN/GaN HEMT based on the linearity metrics such as g(m), g(m2), g(m3), VIP2, VIP3, IIP3, IMD3 and 1-dB compression point. The impact of various device parameters on the device linearity such as the channel length, doping and thickness of the barrier and spacer layer, Al mole fraction and the work function difference of the two gate metals has also been investigated. It is observed that a suitably designed DMG AlGaN/GaN HEMT can considerably improve the linearity performance and minimize intermodulation distortion due to reduced drain induced barrier lowering and high-field effect; and a more uniform electric field for applications in 3-G mobile communication and low noise amplifiers. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：587 / 596

页数：10

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