Impact of source/drain tie on a 30 nm bottom gate MOSFETs
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作者:
Lin, Jyi-Tsong
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机构:
Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Lin, Jyi-Tsong
[1
]
Lin, Jeng-Da
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Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Lin, Jeng-Da
[1
]
Shiang-Shi, Kang
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Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Shiang-Shi, Kang
[1
]
Huang, Hau-Yuan
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Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Huang, Hau-Yuan
[1
]
Kao, Kung-Kai
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Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Kao, Kung-Kai
[1
]
Eng, Yi-Chuen
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Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, TaiwanNatl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
Eng, Yi-Chuen
[1
]
机构:
[1] Natl Sun Yat Sen Univ, Dept EE, Kaohsiung, Taiwan
来源:
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS
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2007年
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D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-tied scheme, resulting in improved thermal stability. In addition, S/D-tied BG MOSFET not only diminishes short-channel effects but also decreases source/drain series resistance, which is the major advantage over the conventional ultra-thin SOI.
机构:
Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
JST CREST, Tokyo 1020075, JapanTohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
Endoh, Tetsuo
Sakui, Koji
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机构:
Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
JST CREST, Tokyo 1020075, JapanTohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
Sakui, Koji
Yasuda, Yukio
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机构:
Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
JST CREST, Tokyo 1020075, JapanTohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
Yin, CS
Chan, PCH
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机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Matsuo, K
Saito, T
论文数: 0引用数: 0
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机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Saito, T
Yagishita, A
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机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Yagishita, A
Iinuma, T
论文数: 0引用数: 0
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机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Iinuma, T
Murakoshi, A
论文数: 0引用数: 0
h-index: 0
机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Murakoshi, A
Nakajima, K
论文数: 0引用数: 0
h-index: 0
机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Nakajima, K
Omoto, S
论文数: 0引用数: 0
h-index: 0
机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Omoto, S
Suguro, K
论文数: 0引用数: 0
h-index: 0
机构:
Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
Suguro, K
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