Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

被引：2

作者：

Sazio, Pier J. A. ^{[1
]}

Sparks, Justin R. ^{[2
,3
]}

He, Rongrui ^{[2
,3
]}

Krishnamurthi, Mahesh ^{[2
,3
]}

Fitzgibbons, Thomas C. ^{[2
,3
]}

Chaudhuri, Subhasis ^{[2
,3
]}

Baril, Neil F. ^{[2
,3
]}

Peacock, Anna C. ^{[1
]}

Healy, Noel ^{[1
]}

Gopalan, Venkatraman ^{[2
,3
]}

Badding, John V. ^{[2
,3
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Penn State Univ, State Coll, Dept Chem, University Pk, PA 16802 USA

[3] Penn State Univ, State Coll, Mat Res Inst, University Pk, PA 16802 USA

来源：

SOLID STATE LASERS XXIV: TECHNOLOGY AND DEVICES | 2015年 / 9342卷

关键词：

semiconductor; chalcogenide; optical fibers; waveguides; high pressure chemistry; PRESSURE CHEMICAL-DEPOSITION; PHOTONIC CRYSTAL FIBERS; ZNSE;

D O I：

10.1117/12.2083045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode core-cladding waveguiding.

引用

页数：8

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