Facile synthesis of reduced graphene oxide/tungsten disulfide/tungsten oxide nanohybrids for high performance supercapacitor with excellent rate capability

被引:25
作者
Yang, Zhengchun [1 ]
Zhang, Honghao [1 ]
Ma, Bo [2 ]
Xie, Liqiang [1 ]
Chen, Yantao [2 ]
Yuan, Zhihao [2 ]
Zhang, Kailiang [1 ]
Wei, Jun [1 ,3 ]
机构
[1] Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
[2] Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China
[3] ASTAR, Singapore Inst Mfg Technol, 71 Nanyang Dr, Singapore 638075, Singapore
基金
中国国家自然科学基金;
关键词
Tungsten disulfide; Tungsten oxide; Reduced graphene oxide; Supercapacitor; Rate capability; MANGANESE-DIOXIDE; ENERGY-STORAGE; ENHANCED PERFORMANCE; ELECTRODE MATERIAL; COMPOSITE; NANOPARTICLES; TRANSITION; HYBRIDS; PSEUDOCAPACITANCE; NANOSTRUCTURES;
D O I
10.1016/j.apsusc.2018.08.185
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A facile synthesis strategy is developed for synthesizing nanohybrids of reduced graphene oxide/tungsten disulfide/tungsten oxide (G/TS/TO). The as-prepared nanohybrids can effectively combine the electrical double-layer capacitance and pseudo-capacitance when used as the working electrode of supercapacitor. The specific capacitance value of the G/TS/TO-based working electrode is 148.5 mF cm(-2) at current density of 0.1 mA cm(-2) in the three-electrode setup. Owing to the high electrical conductivity of tungsten oxide, large electrode/electrolyte interfaces of tungsten disulfide and facile electron transfer as well as high surface area of reduced graphene oxide, the G/TS/TO performs an excellent rate capability. A 90% capacitance retention after 3000 cycles of charge/discharge process is also obtained for the symmetrical all-solid-state supercapacitor device fabricated by G/TS/TO. This study provides a new research strategy for electrode materials based on tungsten-containing semiconductors in high rate capability supercapacitors.
引用
收藏
页码:150 / 158
页数:9
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