Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD

被引：17

作者：

Fujisawa, H

Hyodo, S

Jitsui, K

Shimizu, M

Niu, H

Okino, H

Shiosaki, T

机构：

[1] Himeji Inst Technol, Fac Engn, Dept Elect, Himeji, Hyogo 6712201, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Grad Sch Engn, Sakyo Ku, Kyoto 6068317, Japan

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

基金：

日本学术振兴会;

关键词：

PZT; thin films; Ir/IrO2; electrodes; fatigue;

D O I：

10.1080/10584589808202055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of Ir/IrO2/PZT/Ir/IrO2 and IrO2/IrPZT/Ir/IrO2 capacitors were investigated. SIMS analysis showed that the Ir/IrO2 bottom electrode acted as a good barrier layer of the interdiffusion. Ir/IrO2/PZT/Ir/IrO2 capacitors did not show good electrical properties due to plasma damage during top electrode sputtering. On the other hand, IrO2/Ir/PZT/Ir/IrO2 capacitors showed no fatigue up to 10(9) cycles, when annealing after top electrode deposition was performed. Electrical properties of IrO2/Ir/PZT/Ir/IrO2 capacitors were dependent on the thickness of Ir/IrO2 bottom electrode. These experimental results suggested that electrical properties of PZT capacitors were influenced by the interdiffusion at the bottom interface and the plasma damage at the upper interface.

引用

页码：107 / 114

页数：8

共 6 条

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