ICRIF performance with metallic plasma facing components in alcator C-mod

被引:0
作者
Wukitch, S. J. [1 ]
Lin, Y. [1 ]
Lipschultz, B. [1 ]
Parisot, A. [1 ]
Reinke, M. [1 ]
Bonoli, P. T. [1 ]
Porkolab, M. [1 ]
Hutchinson, I. H. [1 ]
Marmar, E. [1 ]
机构
[1] Massachusetts Inst Technol Plasma Sci & Fus, Cambridge, MA 02139 USA
来源
RADIO FREQUENCY POWER IN PLASMAS | 2007年 / 933卷
关键词
ICR-F; antenna; Sheaths;
D O I
暂无
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
To utilize ion cyclotron range of frequency (ICRF) heating for ITER and future fusion reactors where high Z metallic plasma facing components (PFCs) will be employed, impurity production needs to be minimized and controlled. With high Z PFCs, the acceptable fractional concentration of high Z material in the plasma, tungsten similar to 10(-5) and molybdenum similar to 10(-4), is significantly more restrictive compared to low Z material, carbon similar to 0.02. Furthermore, high power ICRF heating needs to be compatible with the use of low Z coatings, e.g. boronization, which in current tokamaks is used to control plasma radiation that has been shown to be very important for high performance H-modes, particularly in devices with high Z PFCs. In Alcator C-Mod, we have investigated the compatibility of high power ICRF heating with high performance plasmas and high-Z PFCs with, and without, boronization. Without boronization, excess radiation particularly from Mo, a strong edge radiator, resulted in lower H-factors. Upon boronization, record C-Mod stored energy and world record plasma pressures were achieved but the beneficial effect of boronization degrades after similar to 50 MJ of injected power. The erosion rate is estimated to be quite significant at similar to 10-15 nm/s. Areas outside the divertor were identified as the important Mo source and B erosion locations and found to be isolated to the active antenna. Furthermore, we observed that erosion rate associated with ICRF heating was unaffected by the heating scenario's single pass absorption.
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页码:75 / +
页数:2
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