One-dimensional stacking miniaturized low-frequency metamaterial bulk for near-field applications

被引:24
作者
Gong, Zhi [1 ]
Yang, Shiyou [1 ]
机构
[1] Zhejiang Univ, Elect Engn Coll, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
DESIGN;
D O I
10.1063/1.5135974
中图分类号
O59 [应用物理学];
学科分类号
摘要
Metamaterials (MTMs) are very promising in engineering applications because they can be used to easily manipulate the spatial and temporal distributions of electromagnetic fields and waves. Nevertheless, studies on MTMs have been directed primarily toward high-frequency electromagnetics and optics. Consequently, the development and applications for MTMs in low-frequency electromagnetics still face some bottleneck problems and challenges. For example, deteriorated resonance strength and large unit dimensions are inevitable for low-frequency MTM unit cells. Moreover, the existing analytical, computational, and experimental methodologies for MTMs are not applicable for low-frequency cases. To address these problems, one-dimensional compact stacking miniaturized MTM bulk in the kHz frequency band, which is the lowest resonance frequency for passive MTMs reported to date in the literature, is proposed and fabricated. This work develops a miniaturized and high performance low-frequency MTM unit cell using a unit topology that consists of two spiral structures connected with a via and a lumped chip capacitor. A numerical model is proposed for performance simulations of the MTM unit cell, and a quality factor equivalence-based method is introduced. An experimental-numerical methodology is developed to extract the complex permeability of the MTM bulk. Comprehensive numerical computations and experimental studies significantly impact the investigation of the extraordinary performance of MTM-based near-field electromagnetic devices. Both numerical and experimental results have confirmed the feasibility and applicability of the presented work, which reveals the extraordinary physical properties of novel MTM-based electromagnetic devices. Published under license by AIP Publishing.
引用
收藏
页数:9
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