Design of a 50-Gb/s Hybrid Integrated Si-Photonic Optical Link in 16-nm FinFET

被引：39

作者：

Raj, Mayank ^{[1
]}

Frans, Yohan ^{[1
]}

Chiang, Ping-Chuan ^{[1
]}

Ambatipudi, Sai Lalith Chaitanya ^{[1
]}

Mahashin, David ^{[1
]}

De Heyn, Peter ^{[2
]}

Balakrishnan, Sadhishkumar ^{[2
]}

Van Campenhout, Joris ^{[2
]}

Grayson, Jimmy ^{[3
]}

Epitaux, Marc ^{[3
]}

Chang, Ken ^{[1
]}

机构：

[1] Xilinx Inc, San Jose, CA 95124 USA

[2] IMEC, B-3001 Leuven, Belgium

[3] Samtec Inc, Santa Clara, CA 95054 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2020年 / 55卷 / 04期

关键词：

Continuous-time linear equalizer (CTLE); electro-absorption modulators (EAMs); optical interconnect; optical receiver (RX); optical transmitter (TX); silicon photonics; transimpedance amplifier (TIA); CMOS; TRANSCEIVER; GB/S;

D O I：

10.1109/JSSC.2019.2960487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents an electro-absorption modulator (EAM)-based single-mode (SM) 50-Gb/s non return to zero (NRZ) Si-photonic optical link in a 16-nm FinFET. The EAM device is modeled to include its electrical and optical properties. The transmitter (TX) uses T-coil based over-peaking to improve modulation efficiency and relax transimpedance amplifier's (TIA's) bandwidth and noise requirement. The receiver (RX) uses a three-stage TIA with T-coils to improve bandwidth. The link sensitivity is -10.9-dBm optical modulation amplitude (OMA) at bit error rate (BER) < 10(-12) with 2-dB link margin at 50 Gb/s. The combined power efficiency of the RX, TX, and clocking is 3.16 pJ/bit and the external laser consumes 1.15 pJ/bit with 10% wall-plug efficiency.

引用

页码：1086 / 1095

页数：10

共 17 条

[1] A Monolithic 25-Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI Process [J].