Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers using DLTS

被引：9

作者：

Gupta, S. ^{[1
,2
]}

Simoen, E. ^{[1
]}

Vrielinck, H. ^{[3
]}

Merckling, C. ^{[1
]}

Vincent, B. ^{[1
]}

Gencarelli, F. ^{[1
,2
]}

Loo, R. ^{[1
]}

Heyns, M. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Met & Mat Engn MTM, B-3001 Louvain, Belgium

[3] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 | 2013年 / 53卷 / 01期

关键词：

DISLOCATIONS; STATES; TRAPS; TECHNOLOGY; INTERFACE;

D O I：

10.1149/05301.0251ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Deep levels associated with extended and point defects in MOS capacitors fabricated on unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep Level Transient Spectroscopy (DLTS). A 9nm layer of Al2O3 is deposited as high-k gate dielectric by Molecular Beam Epitaxy. The trap kinetics and origin of defect states is discussed. Also, it is shown that the dislocation cores in relaxed p-Ge are associated with band-like donor-like states in the lower half of the band gap, and act as carrier trapping and recombination centers. In addition, slow and fast oxide interface traps are observed.

引用

页码：251 / 258

页数：8

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