Interfacial strain reliefs in epitaxial YBa2Cu3O7-δ thin films grown on SrTiO3 buffered MgO substrates

被引：0

作者：

Cui, XT ^{[1
]}

Chen, QY ^{[1
]}

Guo, YX ^{[1
]}

Chu, WK ^{[1
]}

机构：

[1] Univ Houston, Texas Ctr Supercond, Houston, TX 77204 USA

来源：

THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII | 1998年 / 505卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality YBa2Cu3O7-delta (YBCO) epitaxial thin films grown on MgO substrate with a strain-relieved SrTiO3 (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

引用

页码：439 / 444

页数：4