A study on the multilayer π-type thermoelectric power generation module using the metal direct bonding technology
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作者:
Sato, Hiroshi
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Natl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
Sato, Hiroshi
[1
]
Baba, So
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Natl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
Baba, So
[1
]
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Yanaseko, Tetsuro
[2
]
Hirayama, Yuki
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机构:
Chiba Univ, Inage Ku, 1-33 Yayoicho, Chiba, Chiba 2638522, JapanNatl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
Hirayama, Yuki
[3
]
Sato, Kousuke
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Chiba Univ, Inage Ku, 1-33 Yayoicho, Chiba, Chiba 2638522, JapanNatl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
Sato, Kousuke
[3
]
Asanuma, Hiroshi
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Chiba Univ, Inage Ku, 1-33 Yayoicho, Chiba, Chiba 2638522, JapanNatl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
Asanuma, Hiroshi
[3
]
机构:
[1] Natl Inst Adv Ind Sci & Technol, 1-2-1 Namiki, Tsukuba, Ibaraki 3058562, Japan
[2] Yokohama Natl Univ, Hodogaya Ku, 79-1 Tokiwadai, Yokohama, Kanagawa 2408501, Japan
[3] Chiba Univ, Inage Ku, 1-33 Yayoicho, Chiba, Chiba 2638522, Japan
来源:
SMART MATERIALS AND NONDESTRUCTIVE EVALUATION FOR ENERGY SYSTEMS 2016
|
2016年
/
9806卷
关键词:
Thermal Electric Devices;
Direct Bonding;
Enagy Harvest;
D O I:
10.1117/12.2219560
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
The thermoelectric power generation device can take out electric energy from thermal energy directly. In order to transform a difference of temperature into electric power efficiently, it is common to make the thermoelement of N-type and P-type into pi structure. Since the thermoelectric power of an element was small, much pi structures needed to be connected with series, but when a large number were connected with series, there was a problem that internal resistance will become large. In this study, we propose a new multilayer pi-type structure sandwiched between an insulating layer using a metal direct bonding technology. By using this technique, significantly lowered layered structure the electrical resistance of the joint portion, because it can be produced by laminating at least one hundred sheets at a time, even when using a metal material having low Seebeck effect, a sufficiently practical level. It can boost the voltage, a possible cost reduction of the device itself. Further, since the laminated pi type structure fabricated. Each interface is tightly bonded by eutectic reaction, it is possible to use a structure having a power generation function.