Approaches to growth and study of properties of multilayer silicon-silicide hetero, structures with buried semiconductor silicide nanocrystallites

被引：19

作者：

Galkin, N. G. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Automat & Control Process, Far E Branch, Vladivostok 690041, Russia

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 22期

关键词：

silicon; semiconductor silicides; nanocrystallites; monolithic heteronanostructures;

D O I：

10.1016/j.tsf.2007.02.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies of nanosize (5-50 nm) island formation of Fe, Cr and Mg silicides on atomically clean silicon surfaces with (111) and (100) orientations, silicon growth atop nanosize silicide islands and multilayer repetition of developed growth procedure for all silicides have been carried out. Optimization of growth parameters has permitted to create multilayer monolithic heteronanostructures with buried nanocrystallites of iron and chromium disilicides. Only polycrystalline multilayer heteronanostructures with buried Mg2Si nanocrystallites have been created after optimization of growth procedures. A new approach to study optical properties of multilayer heteronanostructures has been developed and tested. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8179 / 8188

页数：10

共 18 条

[11] Morphology and optical properties of Si(111)/CrSi2/Si and Si(111)/Mg2Si/Si systems with self-organized quantum dots [J].

Galkin, NG ;

Maslov, AM ;

Kosikov, SI ;

Talanov, AO ;

Galkin, KN .

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001, 2001, :190-193

[12]

GALKIN NG, 2005, P SEMINANO 2005 SEM, V1, P31

[13] Multilayer Si( 111)/Mg2Si clusters/Si heterostructures: Formation, optical and thermoelectric properties [J].

Galkin, Nickolay G. ;

Galkin, Konstantin N. ;

Vavanova, Svetlana V. .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :12-20

[14] Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy [J].

Mahan, JE ;

Vantomme, A ;

Langouche, G ;

Becker, JP .

PHYSICAL REVIEW B, 1996, 54 (23) :16965-16971

[15] Influence of Si growth temperature for embedding β+FeSi2 and resultant strain in β+FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes [J].

Suemasu, T ;

Negishi, Y ;

Takakura, K ;

Hasegawa, F ;

Chikyow, T .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1804-1806

[16] Growth and characterization of Si-based light-emitting diode with β-FeSi2-particles/Si multilayered active region by molecular beam epitaxy [J].

Sunohara, T ;

Li, C ;

Ozawa, Y ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A) :3951-3953

[17] STM study of the early stages of the Cr/Si(111) interface formation [J].

Utas, OA ;

Utas, TV ;

Kotlyar, VG ;

Zotov, AV ;

Saranin, AA ;

Lifshits, VG .

SURFACE SCIENCE, 2005, 596 (1-3) :53-60

[18] EPITAXIAL-GROWTH OF CRSI AND CRSI2 ON SI(111) [J].

WETZEL, P ;

PIRRI, C ;

PERUCHETTI, JC ;

BOLMONT, D ;

GEWINNER, G .

SOLID STATE COMMUNICATIONS, 1988, 65 (10) :1217-1220

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