Approaches to growth and study of properties of multilayer silicon-silicide hetero, structures with buried semiconductor silicide nanocrystallites

被引：19

作者：

Galkin, N. G. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Automat & Control Process, Far E Branch, Vladivostok 690041, Russia

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 22期

关键词：

silicon; semiconductor silicides; nanocrystallites; monolithic heteronanostructures;

D O I：

10.1016/j.tsf.2007.02.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies of nanosize (5-50 nm) island formation of Fe, Cr and Mg silicides on atomically clean silicon surfaces with (111) and (100) orientations, silicon growth atop nanosize silicide islands and multilayer repetition of developed growth procedure for all silicides have been carried out. Optimization of growth parameters has permitted to create multilayer monolithic heteronanostructures with buried nanocrystallites of iron and chromium disilicides. Only polycrystalline multilayer heteronanostructures with buried Mg2Si nanocrystallites have been created after optimization of growth procedures. A new approach to study optical properties of multilayer heteronanostructures has been developed and tested. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8179 / 8188

页数：10

共 18 条

[1]

BORISENKO VE, 2000, SEMICONDUCTING SILIC, P346

[2] Iron silicides grows on Si(100): Metastable and stable phases [J].

Chrost, J ;

Hinarejos, JJ ;

Segovia, P ;

Michel, EG ;

Miranda, R .

SURFACE SCIENCE, 1997, 371 (2-3) :297-306

[3] In situ differential reflectance spectroscopy study of early stages of beta-FeSi2 silicide formation [J].

Dotsenko, Sergey Andreevich ;

Galkin, Nickolay Gennadievich ;

Gouralnik, Alexander Samuilovich ;

Koval, Ludmila Valerievna .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :113-119

[4] MOLECULAR-BEAM EPITAXY OF CRSI2 ON SI(111) [J].

FATHAUER, RW ;

GRUNTHANER, PJ ;

LIN, TL ;

CHANG, KT ;

MAZUR, JH ;

JAMIESON, DN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :708-712

[5]

Galkin G.N., 2006, INT WORKSH NAN MAT N, P58

[6]

GALKIN GN, 2006, INT WORKSH NAN MAT N, P16

[7] Formation and transport properties of Si(111)/beta-FeSi2/Si nanocluster structures [J].

Galkin, N. G. ;

Goroshko, D. L. ;

Gouralnik, A. S. ;

Polyarnyi, V. O. ;

Louchaninov, I. V. ;

Vavanova, S. V. .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 :97-106

[8]

Galkin N.G., 2005, P SEMINANO 2005 SEM, V1, P35

[9] Solid phase growth and properties of Mg2Si epitaxial films on Si(111) [J].

Galkin, NG ;

Vavanova, SV ;

Galkin, KN ;

Maslov, AM .

Fundamental Problems of Optoelectronics and Microelectronics II, 2005, 5851 :435-440

[10] Self-organization of β-FeSi2 islands on Si(111)7x7 [J].

Galkin, NG ;

Polyarnyi, VO ;

Gouralnik, AS .

THIN SOLID FILMS, 2004, 464 :199-203

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