The origin of oxygen in oxide thin films: Role of the substrate

被引：99

作者：

Schneider, C. W.

Esposito, M.

Marozau, I.

Conder, K.

Doebeli, M.

Hu, Yi

Mallepell, M.

Wokaun, A.

Lippert, T. ^{[1
]}

机构：

[1] Paul Scherrer Inst, Dept Gen Energy Res, CH-5232 Villigen, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

基金：

瑞士国家科学基金会;

关键词：

MOTT-INSULATOR; SRTIO3; HETEROSTRUCTURES; INTERFACES; MOBILITY; SILICON;

D O I：

10.1063/1.3515849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

During the growth of oxide thin films by pulsed laser deposition, a strong oxygen substrate-to-film transfer has been experimentally observed for SrTiO3 and LaAlO3 thin films epitaxially grown on O-18 exchanged SrTiO3 and LaAlO3 substrates by secondary ion mass spectrometry depth profiling. This oxygen transfer effect can seriously change the respective thin film properties. Taking the oxygen substrate contribution to the overall oxygen balance into account, original ways to design material properties of oxide thin films can be envisioned like a controlled charge carrier doping of SrTiO3 thin films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515849]

引用

页数：3

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