Screening charge localization at LiNbO3 surface with Schottky junction

被引：1
|
作者：
Nagata, Takahiro [1 ]
Chikyow, Toyohiro [1 ]
Kitamura, Kenji [2 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Environm & Energy Mat Div, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 17期
关键词：
ELECTRON-EMISSION; FILMS;
D O I：
10.1063/1.4947578
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Screening charge localization was demonstrated by using a Schottky contact with LiNbO3 (LN). A Cr/LN stack structure with a 2 mu m diameter hole array penetrating the Cr layer localized the screening charge of LN in the hole, although the Al/LN stack structure exhibited no surface charge localization behavior. X-ray photoelectron spectroscopy revealed that Cr formed a Schottky contact with LN, which prevents the screening charge from escaping from the hole arrays. The screening charge localization was enhanced by inserting SiO2 between the metal and LN, which moved the position of the Fermi level to mid gap. Published by AIP Publishing.
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页数：4
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