Simulation of hot hole currents in ultra-thin silicon dioxides: The relationship between time to breakdown and hot hole currents

被引：4

作者：

Ezaki, T ^{[1
]}

Nakasato, H ^{[1
]}

Yamamoto, T ^{[1
]}

Hane, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Silicon Syst Res Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the relationship between the currents of hot holes injected into silicon dioxides and the time to break down (T-BD) characteristics, The hot hole currents were calculated by combining a tunnel current simulator and a silicon full-band Monte Carlo (FBMC) simulator. Our results show that the hot hole current seems to be responsible for oxide degradation and breakdown. Moreover, the additional impact ionization process where electrons are relaxed into the valence bands plays an important role in hot hole generation in the low-gate-voltage region.

引用

页码：34 / 37

页数：4

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