A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

被引：35
作者：
Gao, Huiyan [1 ,2 ,3 ]
Li, Nayu [1 ,2 ,3 ]
Li, Min [1 ,2 ,3 ]
Wang, Shaogang [1 ,2 ,3 ]
Zhang, Zijiang [1 ,2 ,3 ]
Kuan, Yen-Cheng [4 ]
Song, Chunyi [1 ,2 ,3 ]
Yu, Xiaopeng [5 ]
Gu, Qun Jane [6 ]
Xu, Zhiwei [1 ,2 ,3 ]
机构：
[1] Zhejiang Univ, Inst Marine Elect & Intelligent Syst, Ocean Coll, Zhoushan 316021, Peoples R China
[2] Zhejiang Univ, Minist Educ, Engn Res Ctr Ocean Sensing Technol & Equipment, Zhoushan 316021, Peoples R China
[3] Zhejiang Univ, Key Lab Ocean Observat Imaging Testbed Zhejiang P, Zhoushan 316021, Peoples R China
[4] Natl Chiao Tung Univ, Int Coll Semicond Techol, Hsinchu 30010, Taiwan
[5] Zhejiang Univ, Inst VLSI Design & Res, Coll Informat Sci & Elect Engn, Hangzhou 310058, Peoples R China
[6] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2021年 / 69卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Gain; Wideband; Impedance matching; Couplings; Noise measurement; Couplers; Transistors; Balanced amplifier; frequency-selective gain equalization technique; magnetically coupled resonator (MCR); noise matching; variable-gain low-noise amplifier (VG-LNA); WIDE-BAND LNA; COMMON-GATE; DESIGN; FEEDBACK; POWER;
D O I：
10.1109/TMTT.2020.3038470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents a wideband balanced variablegain low-noise amplifier (VG-LNA) implemented in a 55-nm CMOS process. The proposed LNA has two cascode stages with an interstage matching transformer to constitute a fourth-order magnetically coupled resonator with two resonant peaks. The frequency-selective gain equalization technique is proposed to compensate for the gain variation of interstage dual-resonant tanks. This VG-LNA leverages a current-steering technique to realize a phase-invariant 18-dB tunable gain range with a measured input 1-dB gain compression point (IP1dB) at 9 GHz from -12.2 to -5 dBm. The LNA achieves a power gain of 20.2 dB with +/- 0.5-dB gain variation and a noise figure (NF) of 3.26 dB from 6.5 to 12 GHz. Due to the lumped Lange couplers, the input and output matching are both better than -14 dB. This chip occupies 1.44 x 0.68 mm2 area excluding pads and consumes 75 mW.
引用
收藏
页码：732 / 744
页数：13
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