Improvements of resonance characteristics due to thermal annealing of Bragg reflectors in ZnO-based FBAR devices

被引：9

作者：

Kim, DH ^{[1
]}

Yim, M ^{[1
]}

Chai, D ^{[1
]}

Yoon, G ^{[1
]}

机构：

[1] Informat & Commun Univ, Sch Engn, Taejon 305732, South Korea

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 13期

关键词：

D O I：

10.1049/el:20030638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of thermal annealing of W/SiO2 multilayer Bragg reflectors on the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices are presented for the first time. The resonance characteristics could be significantly improved due to thermal annealing. FBAR devices with Bragg reflectors annealed at 400degreesC/30 min show excellent resonance characteristics in terms of return loss and Q-factor.

引用

页码：962 / 964

页数：3

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