Effects of ion damage on the surface of ITO films during plasma treatment

被引：18

作者：

Shin, Hyunjung ^{[1
]}

Kim, Chanhyung

Bae, Changdeuck

Lee, Jang-Sik

Lee, Jaegab

Kim, Sunghan

机构：

[1] Kookmin Uni, Sch Adv Mat Engn, Ctr Mat & Process Self Assembly, Seoul 136702, South Korea

[2] DuPont Display, Santa Barbara, CA 93117 USA

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 22期

基金：

欧洲研究理事会;

关键词：

ion damage; ITO; conducting atomic force microscopy;

D O I：

10.1016/j.apsusc.2007.05.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

During a surface treatment using CF4/O-2 gas plasma, energetic ions affected the defect structures on the top surface of ITO thin films. C-AFM and local I-V measurements showed the formation of the depleted layer after a plasma treatment with a bias of 20 W; XPS showed the creation of new defect structures. Donor concentration in the damaged top surface of the ITO films was found to be decreased. Sn-based neutral defect complexes and reduced oxygen, which could trap the electrons, have been proposed to be formed. This can also explain the increase of the work function of ITO. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8928 / 8932

页数：5

共 14 条

[1] Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF4)/oxygen (O2) to improve the performance of organic light-emitting diodes [J].

Chan, IM ;

Hong, FCN .

THIN SOLID FILMS, 2003, 444 (1-2) :254-259

[2] Neutron diffraction study on the defect structure of indium-tin-oxide [J].

González, GB ;

Cohen, JB ;

Hwang, JH ;

Mason, TO ;

Hodges, JP ;

Jorgensen, JD .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2550-2555

[3] Influence of dc magnetron sputtering parameters on surface morphology of indium tin oxide thin films [J].

Jung, YS ;

Lee, DW ;

Jeon, DY .

APPLIED SURFACE SCIENCE, 2004, 221 (1-4) :136-142

[4]

Kim C, 2005, J KOREAN PHYS SOC, V47, pS417

[5] X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films [J].

Kim, JS ;

Ho, PKH ;

Thomas, DS ;

Friend, RH ;

Cacialli, F ;

Bao, GW ;

Li, SFY .

CHEMICAL PHYSICS LETTERS, 1999, 315 (5-6) :307-312

[6] Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment [J].

Lee, KH ;

Jang, HW ;

Kim, KB ;

Tak, YH ;

Lee, JL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) :586-590

[7] Nanoscale electrical conductivity and surface spectroscopic studies of indium-tin oxide [J].

Liau, YH ;

Scherer, NF ;

Rhodes, K .

JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (16) :3282-3288

[8] Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy [J].

Lin, HN ;

Chen, SH ;

Perng, GY ;

Chen, SA .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3976-3979

[9] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].

Mason, MG ;

Hung, LS ;

Tang, CW ;

Lee, ST ;

Wong, KW ;

Wang, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692

[10] Surface oxidation activates indium tin oxide for hole injection [J].

Milliron, DJ ;

Hill, IG ;

Shen, C ;

Kahn, A ;

Schwartz, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576

← 1 2 →