Luminescence properties of Eu3+ activated Y2O3 red phosphor with incorporation of Ga3+ and Bi3+ trace hertero-cations in the Y2O3 lattice
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作者:
Yousif, A.
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Univ Khartoum, Fac Educ, Dept Phys, Omdurman 11115, SudanUniv Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Yousif, A.
[2
]
Abbas, Babiker H.
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Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Univ Khartoum, Fac Educ, Dept Phys, Omdurman 11115, SudanUniv Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Abbas, Babiker H.
[1
,2
]
Kumar, Vijay
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Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Chandigarh Univ, Dept Appl Phys, Mohali, Punjab, IndiaUniv Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Kumar, Vijay
[1
,3
]
Pandey, Anurag
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Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South AfricaUniv Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Pandey, Anurag
[1
]
Swart, H. C.
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Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South AfricaUniv Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Swart, H. C.
[1
]
机构:
[1] Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
[2] Univ Khartoum, Fac Educ, Dept Phys, Omdurman 11115, Sudan
[3] Chandigarh Univ, Dept Appl Phys, Mohali, Punjab, India
The luminescence characteristics of Eu3+ doped Y2O3 in the presence and absence of Bi3+/Ga3+ trace ions prepared by the sol-gel combustion method were investigated. The results revealed that, the Bi3+ and Ga3+ ions have a significant influence on the excitation position and emission bands intensity of Eu3+ doped Y2O3. The cathodoluminescence (CL) intensity of the Y2O3:Eu3+ incorporated with Bi3+/Ga3+ ions has been considerably enhanced (five times), compared to the CL intensity of the unincorporated Y2O3:Eu3+ samples. This phenomenon was attributed to the energy exchange in the excitation bands of the Bi3+ and Eu3+ ions.
机构:
IPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Alarcon-Flores, G.
Garcia-Hipolito, M.
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Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04150, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Garcia-Hipolito, M.
Aguilar-Frutis, M.
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IPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Aguilar-Frutis, M.
Carmona-Tellez, S.
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Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 04150, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Carmona-Tellez, S.
Martinez-Martinez, R.
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Univ Tecnol Mixteca, Mexico City 69000, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Martinez-Martinez, R.
Campos-Arias, M. P.
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IPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Campos-Arias, M. P.
Zaleta-Alejandre, E.
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Univ Autonoma Estado Hidalgo, Escuela Super Apan, Apan 43920, Hidalgo, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
Zaleta-Alejandre, E.
Falcony, C.
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CINVESTAV, Dept Fis, Mexico City 07000, DF, MexicoIPN, Centro Invest Ciencia Aplicada & Tecnol Avanzada, Mexico City 11500, DF, Mexico
机构:
Univ Orange Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Univ Khartoum, Fac Educ, Dept Phys, POB 321, Omdurman 11115, SudanUniv Orange Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
Yousif, A.
Swart, H. C.
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Univ Orange Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa