A 1-V micropower log-domain integrator based on FGMOS transistors operating in weak inversion

被引:27
作者
Rodríguez-Villegas, E
Yúfera, A
Rueda, A
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England
[2] Univ Sevilla, Inst Microelect Sevilla, Seville 41012, Spain
关键词
floating-gate MOS (FGMOS); log-domain filters; low power; low voltage;
D O I
10.1109/JSSC.2003.820879
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the implementation of a low-power floating gate MOS-(FGMOS)-based log-domain integrator that reduces the minimum required voltage supply and the risk of instabilities. The performance of the block is illustrated with the experimental results of a second-order low-pass/bandpass filter working in the audio range with a 1-V voltage supply and a maximum power consumption of 2 muW. The experimental results show that the FGMOS transistor is a powerful device that enables the design of low-voltage-supply low-power-consumption filters which have very simple topologies.
引用
收藏
页码:256 / 259
页数:4
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