SAW Resonator Band-Pass Filter on GaN/Si operating at 8 GHz

被引：0

作者：

Bunea, Alina-Cristina ^{[1
]}

Neculoiu, Dan ^{[1
,2
]}

Dinescu, Adrian ^{[1
]}

机构：

[1] Natl Inst R&D Microtechnol IMT, Bucharest 077190, Romania

[2] Univ Politehn Bucuresti, Bucharest 060042, Romania

来源：

2021 51ST EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2021年

关键词：

band-pass filter; gallium nitride; planar filters; surface acoustic waves; SAW resonator filter; X band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication and measurements of a GaN/Si surface acoustic wave resonators band pass filter operating at 8 GHz. The design is based on multiphysics simulations, equivalent circuit modelling and 3D electromagnetic analysis. The resonators with electrodes width of 130 nm were fabricated using electron beam lithography and liftoff technique. The measured insertion losses show a minimum value of 13.2 dB at 8.06 GHz and a 20 MHz 3 dB bandwidth. The filter is compact and can be directly integrated in a GaN based X-band monolithic microwave integrated circuit platform.

引用

页码：857 / 860

页数：4

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