SAW Resonator Band-Pass Filter on GaN/Si operating at 8 GHz

This paper presents the design, fabrication and measurements of a GaN/Si surface acoustic wave resonators band pass filter operating at 8 GHz. The design is based on multiphysics simulations, equivalent circuit modelling and 3D electromagnetic analysis. The resonators with electrodes width of 130 nm were fabricated using electron beam lithography and liftoff technique. The measured insertion losses show a minimum value of 13.2 dB at 8.06 GHz and a 20 MHz 3 dB bandwidth. The filter is compact and can be directly integrated in a GaN based X-band monolithic microwave integrated circuit platform.