Modeling of bulk GaN crystal growth from gallium-sodium solution

被引：3

作者：

Vorob'ev, Andrei ^{[1
]}

Kondratyev, Alexey ^{[1
]}

Kalaev, Vladimir ^{[1
]}

Talalaev, Roman ^{[1
]}

机构：

[1] Soft Impact Ltd, STR Grp, 64 Bolshoi Sampsonievskii Pr,Build E 194044, St Petersburg, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 533卷 / 533期

关键词：

Computer simulation; Growth models; Growth from solutions; Liquid phase epitaxy; Nitrides; Semiconducting III-V materials; FLUX GROWTH; SYSTEM;

D O I：

10.1016/j.jcrysgro.2020.125480

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A modeling approach for bulk GaN growth from gallium-sodium liquid solutions is suggested. The approach combines the thermodynamic theory of non-ideal solutions with kinetics of the chemical reactions proceeding at the free surface of the solution and at the GaN growth interface. The atomic nitrogen solubility in the solution is verified using available experimental data. The N-solubility and GaN growth rate are studied as a function of the sodium fraction in the solution and the nitrogen gas pressure. Growth of laboratory-scale ( < 2 cm diameter) and industrial-scale (6 '' diameter) GaN crystals is considered. The growth rate of smaller crystals is verified against the experimental data as a function of melt composition, nitrogen pressure and temperature gradient in the melt. Optimization of crucible diameter and melt depth is performed to improve the thickness uniformity of 6 '' bulk GaN crystals.

引用

页数：8

共 18 条

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